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| SAP09N (Complement to type SAP09P) Equivalent circuit B C D R: 70 Typ. S Emitter resistor RE: 0.22 Typ. E Application: Audio sElectrical Characteristics Symbol ICBO IEBO VCEO hFE V VCE (sat) VBE (sat) VBE Di VF RE Conditions VCB=150V VEB = 5V IC =30mA VCE =4V, IC=6A IC=6A, IB =6mA IC=6A, IB=6mA VCE =20V, IC=40mA IF=2.5mA IE =1A 0.176 1220 705 0.22 0.264 150 5000 20000 2.0 2.5 V V mV mV 2.540.1 3.810.1 (7.62) (12.7) 17.80.3 40.1 sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Di IF Tj Tstg Ratings 150 150 5 10 1 80 ( Tc = 25C) 10 150 -40 to +150 Unit V V V A A W mA C C ( Ta = 25C ) Ratings min typ max External Dimensions 3.30.2 15.40.3 9.90.2 3.20.2 50.2 (Unit: mm) 4.50.2 1.60.2 Unit A A V 100 100 3.4max a b 10.1 (41) (2.5) 0.65 -0.1 +0.2 0.8 -0.1 +0.2 2.540.1 3.810.1 (18) 1.35 -0.1 +0.2 0.65 -0.1 VhFE Rank O (5000 to 12000), Y (8000 to 20000) BD C SE Weight: Approx 8.3g a. Part No. b. Lot No. IC - VCE Characteristics (Typical) 10mA 2.5mA 2.0mA VCE(sat) - IB Characteristics (Typical) Collector-Emitter Saturation Voltage VCE(sat) (V) 3 10 IC - VBE Temperature Characteristics (VCE =4V) 10 1.5 mA 1.3mA 1.0m A A 1.8mA 0.8m 8 8 Collector Current IC (A) 0.5mA 6 2 IC =8A 6A 4A 1 Collector Current IC (A) 6 0.3mA 4 IB= 0.2mA 2 4 125C 25C 2 - 30C 0 0 2 4 6 0 0.3 0.5 1 5 10 50 100 0 0 1 2 20.1 +0.2 (36) 70.2 220.3 230.3 280.3 3 Collector-Emitter Voltage VCE (V) Base Current IB (mA) Base-Emitter Voltage VBE (V) hFE - IC Characteristics (Typical) DC Current Gain hFE j-a (C/W) j-a - t 3 Characteristics 50000 125C 10000 5000 25C (VCE = 4V) Transient Thermal Resistance 1 -30C 0.5 1000 500 200 0.03 0.1 1 5 10 50 100 500 1000 2000 0.1 0.5 1 5 10 Collector Current IC (A) Time t (ms) Safe Operating Area (Single Pulse) 30 80 PC - Ta Derating 10 Collector Current IC (A) 10 5 D. 10 m 0m s s Maximum Power Dissipation Pc (W) 60 W ith C In ite fin at he 1 0.5 40 k sin 20 Without Heatsink Natural Cooling 0.1 0.05 3 5 10 50 100 200 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage VCE (V) Ambient Temperature Ta (C) 165 |
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